Using Landau quantization to probe disorder in semiconductor heterostructures
Asser Elsayed, Davide Costa, Lucas E. A. Stehouwer, Alberto Tosato, Mario Lodari, Brian Paquelet Wuetz, Davide Degli Esposti, Giordano Scappucci
公開日: 2025/10/3
Abstract
Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays. Disorder of the parent two-dimensional electron or hole gas is commonly estimated by the critical, percolation-driven density associated with the metal-insulator transition. However, a reliable estimation of the critical density within percolation theory is hindered by the need to measure conductivity with high precision at low carrier densities, where experiments are most difficult. Here, we connect experimentally percolation density and quantum Hall plateau width, in line with an earlier heuristic intuition, and offer an alternative method for characterizing semiconductor heterostructure disorder.