📝 SummarXiv

Abstract

Structural defects in 2D-transition metal dichalcogenides are critical in modulating their optical and electrical behavior. Nevertheless, precise defect control within the monolayer regime poses a significant challenge. Herein, a high-energy (1MeV) electron beam irradiation strategy is harnessed to induce defects in monolayer MoS2. Controlled variation of electron-beam irradiation time tunes the defect density, as reflected by the evolution of defect-mediated photoluminescence characteristics. The optically active defect emission appearing at approx. 200-300meV below the A exciton at 85K exhibits a systematic increase in intensity with prolonged exposure and saturates at higher laser excitation power. Circular polarization-resolved photoluminescence spectroscopy reveals strong suppression of valley polarization of the A exciton after irradiation. Complementary x-ray photoelectron spectroscopy identifies enhanced Mo-O bonding signatures in MoS2 following irradiation. Kelvin probe force microscopy indicates the transition to p-type doping behaviour. A detailed temperature and power-dependent photoluminescence measurements further elucidate the optical behaviour of these defect states. Density functional theory calculations using these configurations establish that the transition between the conduction band and acceptor states within the bandgap accounts for the defect emission. This work presents a tunable route for defect engineering in monolayer TMDs, enabling controlled tailoring of their structural and optical properties for optoelectronic, electronic and valleytronic applications.