Radiation damage study of Belle II silicon strip sensors with 90 MeV electron irradiation
K. Adamczyk, H. Aihara, K. Amos, S. Bacher, S. Bahinipati, J. Baudot, P. K. Behera, S. Bettarini, L. Bosisio, A. Bozek, F. Buchsteiner, G. Casarosa, C. Cheshta, L. Corona, S. B. Das, G. Dujany, C. Finck, F. Forti, M. Friedl, A. Gabrielli, V. Gautam, B. Gobbo, K. Hara, T. Higuchi, C. Irmler, A. Ishikawa, M. Kaleta, A. B. Kaliyar, K. H. Kang, R. Kumar, K. Lalwani, J. Libby, V. Lisovskyi, L. Massaccesi, G. B. Mohanty, S. Mondal, K. R. Nakamura, Z. Natkaniec, Y. Onuki, F. Otani, A. Paladino, V. Raj, K. Ravindran, J. U. Rehman, I. Ripp-Baudot, G. Rizzo, Y. Sato, C. Schwanda, J. Serrano, T. Shimasaki, S. Tanaka, R. Thalmeier, T. Tsuboyama, Y. Uematsu, L. Vitale, S. J. Wang, Z. Wang, J. Wiechczynski, H. Yin, L. Zani, F. Zeng
公開日: 2025/9/22
Abstract
The silicon strip sensors of the Belle II silicon vertex detector were irradiated with 90 MeV electron beams up to an equivalent 1-MeV-neutron fluence of $3.0\times 10^{13}~{\rm n}_{\rm eq}/{\rm cm^2}$. We measure changes in sensor properties induced by radiation damage in the semiconductor bulk. Electrons around this energy are a major source of beam-induced background during Belle II operation. We discuss observed changes in full depletion voltage, sensor leakage current, noise, and charge collection. The sensor bulk type inverts at an equivalent 1-MeV-neutron fluence of $6.0\times 10^{12}~{\rm n}_{\rm eq}/{\rm cm^2}$. The leakage current increases proportionally to the radiation dose. We determine a damage constant of $3.9 \times 10^{-17}$ A/cm at 17 C$^\circ$ immediately after irradiation, which drops significantly to approximately 40% of the initial value in 200 hours, then stabilizes to approximately 30% of the initial value in 1000 hours. We measure sensor noise and signal charge for a sensor irradiated with the equivalent 1-MeV-neutron fluence of $3.0\times 10^{13}~{\rm n}_{\rm eq}/{\rm cm^2}$. Noise increases by approximately 44% after irradiation, while signal charge does not change significantly when a sufficiently high bias voltage is applied.