📝 SummarXiv

Abstract

Squeezed-light generation in photonic integrated circuits (PICs) is essential for scalable continuous-variable (CV) quantum information processing. By suppressing quantum fluctuations below the shot-noise limit, squeezed states enable quantum-enhanced sensing and serve as a standard resource for CV quantum information processing. While chip-level squeezed-light sources have been demonstrated, extending this capability to the wafer level with reproducible strong squeezing to bolster large-scale quantum-enhanced sensing and information processing has been hindered by squeezed light's extreme susceptibility to device imperfections. Here, we report wafer-scale fabrication, generation, and characterization of two-mode squeezed-vacuum states on a fully complementary metal-oxide-semiconductor (CMOS)-compatible silicon nitride (Si$_3$N$_4$) PIC platform. Across a 4-inch wafer, 8 dies yield 2.9-3.1 dB directly measured quadrature squeezing with $< 0.2$ dB variation, demonstrating excellent uniformity. This performance is enabled by co-integrating ultralow-loss, strongly overcoupled high-$Q$ microresonators, cascaded pump-rejection filters, and low-loss inverse-tapered edge couplers. The measurements agree with a first-principles theoretical model parameterized solely by independently extracted device parameters and experimental settings. The measured squeezing level can be further improved by enhancing the efficiencies of off-chip detection and chip-to-fiber coupling. These results establish a reproducible, wafer-scale route to nonclassical-light generation in integrated photonics and lay the groundwork for scalable CV processors, multiplexed entanglement sources, and quantum-enhanced sensing.