📝 SummarXiv

Abstract

Controlling dopant transport with high spatial precision is crucial for improving the semiconductor functionality, reliability, and scalability. Although prior models of noise-assisted diffusion have been largely confined to idealized one dimensional settings, we present a physically realistic two-dimensional theoretical framework that integrates anisotropic quartic confinement with localized thermal cold spots to direct impurity dynamics. Using a generalized Fokker Planck formalism, we show that the geometry of the thermal landscape, particularly the width and arrangement of cold spots, governs a noise induced transition between monostable and bistable effective potentials. This enables tunable noise activated hopping and supports conditions favorable for stochastic resonance (SR) if weak periodic driving is applied. Quantitative predictions are made for how impurity localization and effective barrier heights depend on the cold spot width and trap depth , offering experimentally testable signatures. We propose an experimental realization using optothermal techniques, such as dual beam optical tweezers and laser cooling, which can sculpt reconfigurable thermal profiles with sub micron resolution. This model establishes a versatile pathway for programmable impurity manipulation and noise sensitive control in semiconductor structures, bridging theoretical predictions with feasible experimental detection via photoluminescence mapping or lock in signal amplification.