High-current p-type transistors from precursor-engineered synthetic monolayer WSe$_2$
Anh Tuan Hoang, Kathryn Neilson, Kaikui Xu, Yucheng Yang, Stephanie M. Ribet, Tara Peña, Giulio D'Acunto, Young Suh Song, Anton E. O. Persson, William Millsaps, Colin Ophus, Matthew R. Rosenberger, Eric Pop, Andrew J. Mannix
公開日: 2025/9/9
Abstract
Monolayer tungsten diselenide (WSe$_2$) is a leading candidate for nanoscale complementary logic. However, high defect densities introduced during thin-film growth and device fabrication have limited p-type transistor performance. Here, we report a combined strategy of precursor-engineered chemical vapor deposition and damage-minimizing fabrication to overcome this limitation. By converting tungsten trioxide and residual oxyselenides into reactive suboxides before growth, and precisely regulating selenium delivery during deposition, we synthesize uniform, centimeter-scale monolayer WSe$_2$ films with charged defect densities as low as $5 \times 10^{9}$ cm$^{-2}$. Transistors fabricated from these films achieve record p-type on-state current up to $888 \mu$A$\cdot\mu$m$^{-1}$ at $V_{\mathrm{DS}}=-1$ V, matching leading n-type devices. This leap in material quality closes the p-type performance gap without exotic doping or contact materials, marking a critical step towards complementary two-dimensional semiconductor circuits.