Two-dimensional magnetic tunnel p-n junctions for low-power electronics
Wenkai Zhu, Ziao Wang, Tiangui Hu, Zakhar R. Kudrynskyi, Tong Zhou, Zakhar D. Kovalyuk, Ce Hu, Hailong Lin, Xiaodong Li, Yongcheng Deng, Quanshan Lv, Lixia Zhao, Amalia Patane, Igor Zutic, Houzhi Zheng, Kaiyou Wang
公開日: 2025/9/4
Abstract
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the miniaturization of electronic components, enabling the development of more efficient electronics. Here, we report on a giant anomalous zero-bias spin voltage in magnetic tunnel junctions based on 2D materials. The generation, manipulation and detection of electron spin across a nanometer-thick magnetic tunnel junction do not require any applied bias. It is achieved by exploiting high-quality ferromagnetic/semiconductor interfaces and the asymmetric diffusion of spin-up/spin-down electrons across a semiconductor p-n junction. The large spin-voltage signal exceeds 30,000% and is far greater than the highest magnetoresistance signals reported to date. Our findings reveal unexplored opportunities to transform and amplify spin information for low-power electronics.