📝 SummarXiv

Abstract

In moir\'e-patterned van der Waals structures of transition metal dichalcogenides, correlated insulators can form under integer and fractional fillings, whose transport properties are governed by various quasiparticle excitations including holons, doublons and interlayer exciton insulators. Here we theoretically investigate the nearest-neighbor inter-site hoppings of holons and interlayer exciton insulators. Our analysis indicates that these hopping strengths are significantly enhanced compared to that of a single carrier. The underlying mechanism can be attributed to the strong Coulomb interaction between carriers at different sites. For the interlayer exciton insulator consisting of a holon and a carrier in different layers, we have also obtained its effective Bohr radius and energy splitting between the ground and first-excited states.