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Abstract

The effect of a constant electric field on two-photon absorption in a semiconductor is calculated using an independent-particle theory. The theoretical framework is an extension of a theory of the one-photon Franz-Keldysh effect [Wahlstrand and Sipe, Phys. Rev. B 82, 075206 (2010)]. The theory includes the effect of the constant field, including field-induced coupling between closely spaced bands, in the electronic wavefunctions and calculates optical absorption perturbatively. Numerical calculations are performed using a 14-band $\mathbf{k} \cdot\mathbf{p}$ band structure model for GaAs. For all nonzero tensor elements, field-enabled two-photon absorption (TPA) below the band gap and Franz-Keldysh oscillations in the TPA spectrum are predicted, with a generally larger effect in tensor elements with more components parallel to the constant electric field direction. Some tensor elements that are zero in the absence of a field become nonzero in the presence of the constant electric field and depend on its sign. Notably, these elements are linear in the electric field to lowest order and may be substantial away from band structure critical points at room temperature and/or with a non-uniform field. Electric-field-induced changes in the carrier injection rate due to interference between one- and two-photon absorption are also calculated. The electric field enables this bichromatic coherent control process for polarization configurations where it is normally forbidden, and also modifies the spectrum of the process for configurations where it is allowed by crystal symmetry.