📝 SummarXiv

Abstract

Recently, we developed an \textit{ab initio} approach of spin diffusion length (l_{s}) in solids [Phys. Rev. Lett. 135, 046705 (2025)], based on a linearized density-matrix master equation with quantum treatment of electron scattering processes. In this work, we extend the method to include the drift term due to an electric field along a periodic direction, implemented efficiently using a Wannier-representation-based covariant derivative. We employ this approach to investigate the electric-field effect on l_{s} of monolayer WSe_{2}, bulk GaAs, bulk GaN, and graphene-h-BN heterostructure. Our results show that l_{s} can be significantly enhanced or suppressed by a moderate downstream or upstream field respectively. Although the widely-used drift-diffusion model performs well for WSe_{2} and GaAs, it can introduce large errors of the electric-field-induced changes of l_{s} in both GaN and graphene-h-BN. Thus, to accurately capture the influence of electric fields on l_{s} in realistic materials, it is necessary to go beyond the drift-diffusion model and adopt a microscopic \textit{ab initio} methodology. Moreover, in graphene-h-BN, we find that the field-induced change of l_{s} is not only governed by the drift term in the master equation, but is also significantly affected by the electric-field modification of the equilibrium density matrix away from Fermi-Dirac distribution function.