📝 SummarXiv

Abstract

Accurate modeling of spin dynamics in hole-based quantum dot qubits demands high-fidelity simulations that capture realistic device geometries, material interfaces, and self-consistent electrostatics. Here, we present a comprehensive three-dimensional study of gate-defined quantum dot hole spin qubits in strained Si$_{0.2}$Ge$_{0.8}$/Ge heterostructures. In contrast to prior work relying on idealized confinement or decoupled Poisson-Schr\"odinger treatments, our approach combines self-consistent electrostatics with a four-band Luttinger-Kohn Hamiltonian to resolve spin-orbit interactions, wavefunction asymmetries, and g-tensor anisotropies in realistic device structures. We quantify the impact of device size and gate bias on wavefunction localization, electric-field-induced g-factor modulation, and identify "sweet spots" in vertical electric field where g-factor sensitivity to charge noise is minimized, enhancing spin dephasing times. Spin relaxation due to phonon coupling is also modeled, revealing size-dependent T1 behavior consistent with strong Rashba-type spin-orbit coupling and a magnetic-field scaling near $B^{-8}$. This work establishes a predictive modeling framework for optimizing spin coherence in planar Ge quantum dots and provides quantitative design guidance for scalable, electrically controlled hole spin qubits in group-IV semiconductors.