📝 SummarXiv

Abstract

Electronic band structures usually remain unaffected by doping via a chemical-potential shift or by increasing the temperature in conventional band insulators. In contrast, it has been shown that those of Mott and Kondo insulators can change by doping or by increasing the temperature: electronic modes are induced within the band gap, exhibiting momentum-shifted magnetic dispersion relations from the band edges. Here, by generalizing the underlying mechanism of the remarkable strong-correlation effects, this study shows that various spin and charge perturbations, including magnetization of spin-gapped Mott and Kondo insulators, can induce electronic modes. The emergent modes can change the band structure, provided that a macroscopic number of spins or charges are excited by the perturbations at a moment. The origins and dispersion relations of the emergent modes are elucidated by investigating the selection rules and using the Bethe ansatz and effective theory for weak inter-unit-cell hopping. The theoretical results are validated by numerical calculations for the one- and two-dimensional Hubbard models, periodic Anderson models, Kondo lattice models, and ladder and bilayer Hubbard models. This study significantly advances the fundamental understanding of the changes in the band structure driven by spin and charge perturbations and paves the way for band-structure engineering in strong-correlation electronics, utilizing the unconventional characteristics of strongly correlated insulators.