Challenges in Scaling ScAlN Bulk Acoustic Wave Filters toward Ku-Band Frequencies
Sinwoo Cho, Byeongjin Kim, Lezli Matto, Omar Barrera, Pietro Simeoni, Yinan Wang, Michael Liao, Tzu-Hsuan Hsu, Jack Kramer, Matteo Rinaldi, Mark S. Goorsky, Ruochen Lu
Published: 2025/9/3
Abstract
This paper reports an 11.7 GHz compact filter based on Scandium Aluminum Nitride (ScAlN) Film Bulk Acoustic Resonators (FBARs) and provides a detailed analysis of the fundamental challenges that limit performance when scaling to higher frequencies. A 50 {\Omega} ladder filter based on single-layer thin film ScAlN with Platinum (Pt) electrodes was demonstrated at 11.7 GHz with a 3 dB fractional bandwidth (FBW) of 4.0% and an out of band rejection greater than 23.1 dB. However, the filter exhibits a moderate insertion loss (IL) of 6.8 dB, which is attributed to a limited Quality (Q) factor in the constituent resonators. Consequently, we identify and analyze three primary challenges in frequency scaling ScAlN FBARs with thinner film stacks: 1) degradation of piezoelectric thin-film crystal quality, 2) increased series resistance in ultra-thin electrodes, and 3) residual film stress that limits device size and structural integrity. By establishing a clear relationship between these fabrication-level challenges and the resulting device performance, this work provides critical insights for the future development of low-loss acoustic filters for millimeter-wave applications.