Gate tunable anomalous Hall effect: a Berry curvature probe at oxides interfaces
Mattia Trama, Carmine Antonio Perroni, Vittorio Cataudella, Francesco Romeo, Roberta Citro
Published: 2022/2/9
Abstract
The characterization and the experimental measurement of the Berry curvature in solids have become an increasingly relevant task in condensed matter physics. We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in a non magnetic oxide interface as a hallmark of a non-trivial Berry curvature. The observed AHE at low-temperatures in the presence of a planar magnetic field comes from a multiband low-energy model with a generalized Rashba interaction that supports characteristic out-of-plane spin and orbital textures. We also discuss strategies for reconstructing the Berry curvature from the AHE non-linearities in (111) SrTiO$_3$ heterostructure interfaces.